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MMG3004NT1 1 rf device data freescale semiconductor MMG3004NT1 heterojunction bipolar transistor technology (ingap hbt) broadband high linearity amplifier the MMG3004NT1 is a general purpose amplifier that is internally prematched and designed for a broad range of class a, small - signal, high linearity, general purpose applications. it is suitable for applications with frequencies from 400 to 2200 mhz such as cellular, pcs, wll, phs, vhf, uhf, umts and general small - signal rf. features ? frequency: 400 - 2200 mhz ? p1db: 27 dbm @ 2140 mhz ? small - signal gain: 16 db @ 2140 mhz ? third order output intercept point: 44 dbm @ 2140 mhz ? single 5 volt supply ? internally prematched to 50 ohms ? rohs compliant ? in tape and reel. t1 suffix = 1000 units per 16 mm, 13 inch reel. 400 - 2200 mhz, 16 db 27 dbm ingap hbt case 1543 - 03 pqfn 5x5 plastic table 1. typical performance (1) characteristic symbol 900 mhz 1960 mhz 2140 mhz unit small - signal gain (s21) g p 19.5 16.5 16 db input return loss (s11) irl - 7.5 -8 -8 db output return loss (s22) orl -10 -12 -12 db power output @1db compression p1db 27 27 27 dbm third order output intercept point ip3 44 44 44 dbm 1. v dc = 5 vdc, t c = 25 c, 50 ohm system table 2. maximum ratings rating symbol value unit supply voltage v dc 6 v supply current i dc 400 ma rf input power p in 18 dbm storage temperature range t stg - 65 to +150 c junction temperature (2) t j 150 c 2. for reliable operation, the junction temperature should not exceed 150 c. table 3. thermal characteristics (v dc = 5 vdc, i dc = 250 ma, t c = 25 c) characteristic symbol value (3) unit thermal resistance, junction to case r jc 33 c/w 3. refer to an1955, thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf . select documentation/application notes - an1955. document number: MMG3004NT1 rev. 3, 3/2008 freescale semiconductor technical data ? freescale semiconductor, inc., 2005 - 2008. all rights reserved.
2 rf device data freescale semiconductor MMG3004NT1 table 4. electrical characteristics (v dc = 5 vdc, 2140 mhz, t c = 25 c, 50 ohm system, in freescale application circuit) characteristic symbol min typ max unit small - signal gain (s21) g p 15 16 ? db input return loss (s11) irl ? -8 ? db output return loss (s22) orl ? -12 ? db power output @ 1db compression p1db ? 27 ? dbm third order output intercept point ip3 ? 44 ? dbm noise figure nf ? 3.4 ? db supply current (1) i dc 225 250 275 ma supply voltage (1) v dc ? 5 ? v 1. for reliable operation, the junction temperature should not exceed 150 c.
MMG3004NT1 3 rf device data freescale semiconductor table 5. functional pin description name pin number description rf in 2, 3, 4 rf input for the power amplifier. this pin is dc - coupled and requires a dc - blocking series capacitor. rf out / v cc 10, 11, 12 rf output for the power amplifier. this pin is dc - coupled and requires a dc - blocking series capacitor. v cc 14 collector voltage supply. v ba 16 bias voltage supply. gnd backside center metal the center metal base of the pqfn package provides both dc and rf ground as well as heat sink contact for the power amplifier. table 6. esd protection characteristics test methodology class human body model (per jesd 22 - a114) 1b (minimum) machine model (per eia/jesd 22 - a115) a (minimum) charge device model (per jesd 22 - c101) iii (minimum) table 7. moisture sensitivity level test methodology rating package peak temperature unit per jesd 22 - a113, ipc/jedec j - std - 020 3 260 c rf out /v cc rf out /v cc figure 1. pin connections (top view) 1 v ba v cc rf out /v cc rf in rf in 13 59 212 311 410 16 15 14 678 rf in
4 rf device data freescale semiconductor MMG3004NT1 50 ohm typical characteristics i cc , collector current (ma) 0 300 0 v ba , bias voltage (v) figure 2. collector current versus bias voltage 150 100 123 5 v cc = 5 vdc 250 50 4 150 10 3 10 6 120 figure 3. mttf versus junction temperature 10 4 125 130 135 140 145 t j , junction temperature ( c) note: the mttf is calculated with v dc = 5 vdc, i dc = 250 ma mttf (years) 10 5 200
MMG3004NT1 5 rf device data freescale semiconductor 50 ohm application circuit: 900 mhz figure 4. 50 ohm test circuit schematic z1, z11 0.140 x 0.028 microstrip z2, z10 0.060 x 0.028 microstrip z3 0.192 x 0.028 microstrip z4 0.055 x 0.028 microstrip z5 0.084 x 0.028 microstrip z6 0.089 x 0.028 microstrip z7 0.051 x 0.028 microstrip z8 0.055 x 0.028 microstrip z9 0.112 x 0.028 microstrip pcb isola fr408, 0.014 , r = 3.7 rf output rf input r1 l1 c7 c1 z1 z2 z3 c4 c3 r2 v supply 16 dut c10 z6 z9 z10 c2 z11 c6 c5 current mirror 15 14 678 113 59 2 3 4 12 11 10 c8 z4 c9 l3 z7 z8 l2 z5 table 8. 50 ohm test circuit component designations and values part description part number manufacturer c1, c2 15 pf chip capacitors ecuv1h150jcv panasonic c3, c5 0.01 f chip capacitors c0603c103j5rac kemet c4, c6 0.1 f chip capacitors c0603c104j5rac kemet c7, c8 2.2 pf chip capacitors 06035j2r2bs avx c9, c10 1.8 pf chip capacitors 06035j1r8bs avx l1 33 nh chip inductor ll1608- fsl33nj toko l2, l3 3.9 nh chip inductors ll1608- fsl3n9s toko r1 22 , 1/10 w chip resistor crcw060322r0fkea vishay r2 0 , 1/10 w chip resistor crcw06030000fkea vishay
6 rf device data freescale semiconductor MMG3004NT1 50 ohm application circuit: 900 mhz figure 5. 50 ohm test circuit component layout r2 c6 c5 l1 c9 c2 c7 c1 mmg3004/5 rev. 3 v supply r1 rf in rf out c8 l2 c10 l3 c4 c3 v ba
MMG3004NT1 7 rf device data freescale semiconductor 50 ohm typical characteristics: 900 mhz 17 21 840 f, frequency (mhz) figure 6. small - signal gain (s21) versus frequency v dc = 5 vdc 19 g p , small?signal gain (db) t c = 25 c 20 18 870 900 930 960 ?40 c 85 c ?10 0 f, frequency (mhz) figure 7. input return loss (s11) versus frequency ?8 irl, input return loss (db) ?4 ?2 ?6 v dc = 5 vdc 840 870 900 930 960 ?15 ?5 f, frequency (mhz) figure 8. output return loss (s22) versus frequency ?13 orl, output return loss (db) ?9 ?7 ?11 v dc = 5 vdc t c = ?40 c 25 c 85 c 840 870 900 930 960 25 29 27 26 f, frequency (mhz) figure 9. p1db versus frequency p1db, 1 db compression point (dbm) 28 840 870 900 930 960 v dc = 5 vdc 37 47 45 43 41 39 840 870 900 930 960 f, frequency (mhz) figure 10. third order output intercept point versus frequency ip3, third order output intercept point (dbm) v dc = 5 vdc 1 mhz tone spacing 0 10 f, frequency (mhz) figure 11. noise figure versus frequency 6 2 nf, noise figure (db) 840 870 900 930 960 v dc = 5 vdc t c = 85 c 25 c ?40 c 8 t c = 85 c ?40 c 25 c t c = 25 c ?40 c 85 c t c = 25 c 85 c ?40 c 4
8 rf device data freescale semiconductor MMG3004NT1 50 ohm typical characteristics: 900 mhz 29 ?55 ?30 19 p out , output power (dbm) figure 12. is - 95 adjacent channel power ratio versus output power ?35 ?40 ?45 27 25 23 21 acpr, adjacent channel power ratio (dbc) 27 ?80 ?40 17 p out , output power (dbm) figure 13. is - 95 adjacent channel power ratio versus output power ?50 ?60 ?70 25 23 21 19 acpr, adjacent channel power ratio (dbc) t c = 85 c 25 c ?40 c ?50 t c = 85 c ?40 c 25 c v dc = 5 vdc, f = 900 mhz single?carrier is?95, 9 channel forward 885 khz measurement offset 30 khz measurement bandwidth v dc = 5 vdc, f = 900 mhz single?carrier is?95, 9 channel forward 750 khz measurement offset 30 khz measurement bandwidth
MMG3004NT1 9 rf device data freescale semiconductor 50 ohm application circuit: 1900 - 2200 mhz figure 14. 50 ohm test circuit schematic z1, z9 0.140 x 0.028 microstrip z2, z8 0.060 x 0.028 microstrip z3 0.259 x 0.028 microstrip z4 0.080 x 0.028 microstrip z5 0.049 x 0.028 microstrip z6 0.036 x 0.028 microstrip z7 0.254 x 0.028 microstrip pcb isola fr408, 0.014 , r = 3.7 rf output rf input r1 l1 c7 c1 z1 z2 z3 c4 c3 r2 v supply 16 dut c10 z5 z8 z9 c2 c6 c5 current mirror 15 14 678 113 59 2 3 4 12 11 10 c8 z4 c9 z6 z7 table 9. 50 ohm test circuit component designations and values part description part number manufacturer c1, c2 15 pf chip capacitors ecuv1h150jcv panasonic c3, c5 0.01 f chip capacitors c0603c103j5rac kemet c4, c6 0.1 f chip capacitors c0603c104j5rac kemet c7, c10 0.5 pf chip capacitors 06035j0r5bs avx c8 2.7 pf chip capacitor 06035j2r7bs avx c9 0.8 pf chip capacitor 06035j0r8bs avx l1 33 nh chip inductor ll1608- fsl33nj toko r1 22 , 1/10 w chip resistor crcw060322r0fkea vishay r2 0 , 1/10 w chip resistor crcw06030000fkea vishay
10 rf device data freescale semiconductor MMG3004NT1 50 ohm application circuit: 1900 - 2200 mhz figure 15. 50 ohm test circuit component layout r2 c6 c5 l1 c9 c2 c7 c1 mmg3004/5 rev. 3 r1 rf in rf out c8 c10 c4 c3 v supply v ba
MMG3004NT1 11 rf device data freescale semiconductor 50 ohm typical characteristics: 1900 - 2200 mhz 12 18 1900 f, frequency (mhz) figure 16. small - signal gain (s21) versus frequency v dc = 5 vdc 16 13 g p , small?signal gain (db) 17 15 14 1960 2020 2080 2140 2200 ?10 ?5 f, frequency (mhz) figure 17. input return loss (s11) versus frequency ?9 irl, input return loss (db) ?7 v dc = 5 vdc 25 c 1900 1960 2020 2080 2140 2200 ?15 ?5 f, frequency (mhz) figure 18. output return loss (s22) versus frequency ?13 orl, output return loss (db) ?9 ?7 ?11 v dc = 5 vdc t c = ?40 c 25 c 85 c 1900 1960 2020 2080 2140 2200 25 29 27 26 f, frequency (mhz) figure 19. p1db versus frequency p1db, 1 db compression point (dbm) 28 v dc = 5 vdc t c = ?40 c 25 c 85 c 1900 1960 2020 2080 2140 2200 37 47 45 43 41 39 f, frequency (mhz) figure 20. third order output intercept point versus frequency ip3, third order output intercept point (dbm) v dc = 5 vdc 1 mhz tone spacing 0 10 f, frequency (mhz) figure 21. noise figure versus frequency 6 4 2 nf, noise figure (db) v dc = 5 vdc t c = 85 c 25 c ?40 c 8 1900 1960 2020 2080 2140 2200 1900 1960 2020 2080 2140 2200 t c = 25 c ?40 c 85 c t c = 85 c ?40 c ?6 ?8 t c = 25 c ?40 c 85 c
12 rf device data freescale semiconductor MMG3004NT1 50 ohm typical characteristics: 1900 - 2200 mhz 29 ?55 ?30 19 p out , output power (dbm) figure 22. is - 95 adjacent channel power ratio versus output power ?35 ?40 ?50 27 25 23 21 acpr, adjacent channel power ratio (dbc) t c = 85 c 25 c ?40 c 27 ?80 ?40 17 p out , output power (dbm) figure 23. is - 95 adjacent channel power ratio versus output power ?50 ?60 ?70 25 23 21 19 acpr, adjacent channel power ratio (dbc) t c = 85 c 25 c ?40 c 26 ?70 ?20 16 p out , output power (dbm) figure 24. single - carrier w - cdma adjacent channel power ratio versus output power ?30 ?40 ?50 ?60 24 22 20 18 v dc = 5 vdc, f = 2140 mhz single?carrier w?cdma, 3.84 mhz channel bandwidth input signal par = 8.5 db @ 0.01% probability (ccdf) acpr, adjacent channel power ratio (dbc) t c = ?40 c 25 c ?45 85 c v dc = 5 vdc, f = 1960 mhz single?carrier is?95, 9 channel forward 885 khz measurement offset 30 khz measurement bandwidth v dc = 5 vdc, f = 1960 mhz single?carrier is?95, 9 channel forward 750 khz measurement offset 30 khz measurement bandwidth
MMG3004NT1 13 rf device data freescale semiconductor 50 ohm typical characteristics table 10. common emitter s - parameters (v dc = 5 vdc, i dc = 250 ma, t c = 25 c, 50 ohm system) f s 11 s 21 s 12 s 22 f mhz |s 11 | ? |s 21 | ? |s 12 | ? |s 22 | ? 400 0.62780 - 155.59 7.75028 138.19 0.01341 - 20.61 0.73308 177.59 425 0.64110 - 156.56 7.52200 135.93 0.01318 - 18.49 0.73263 177.05 450 0.65775 - 157.61 7.40177 133.81 0.01297 - 16.33 0.73058 176.51 475 0.67009 - 158.60 7.20037 131.68 0.01282 - 14.50 0.72961 176.03 500 0.68313 - 159.63 7.05567 129.69 0.01265 - 12.50 0.72804 175.54 525 0.69585 - 160.59 6.91538 127.76 0.01255 - 10.52 0.72718 175.02 550 0.70558 - 161.46 6.69940 125.72 0.01251 - 8.66 0.72650 174.46 575 0.71811 - 162.43 6.60437 123.98 0.01243 - 6.84 0.72500 173.90 600 0.72694 - 163.35 6.42427 122.18 0.01240 - 5.19 0.72458 173.43 625 0.73704 - 164.30 6.29327 120.47 0.01238 - 3.35 0.72338 172.92 650 0.74634 - 165.20 6.17990 118.78 0.01241 - 1.68 0.72241 172.43 675 0.75277 - 166.03 5.99028 117.13 0.01246 - 0.10 0.72250 171.98 700 0.76214 - 166.98 5.91391 115.54 0.01249 1.32 0.72135 171.44 725 0.76874 - 167.82 5.76815 114.00 0.01254 2.86 0.72103 170.97 750 0.77561 - 168.72 5.64770 112.56 0.01262 4.27 0.72003 170.51 775 0.78327 - 169.54 5.56291 111.09 0.01272 5.73 0.71950 170.03 800 0.78772 - 170.26 5.40401 109.64 0.01285 7.01 0.71888 169.54 825 0.79476 - 171.12 5.33575 108.25 0.01299 8.22 0.71803 169.01 850 0.79893 - 171.88 5.21557 106.88 0.01314 9.31 0.71838 168.59 875 0.80421 - 172.62 5.09417 105.61 0.01326 10.44 0.71707 168.13 900 0.80983 - 173.40 5.04484 104.35 0.01340 11.44 0.71668 167.64 925 0.81256 - 174.09 4.90083 102.95 0.01357 12.52 0.71611 167.14 950 0.81780 - 174.81 4.83208 101.78 0.01377 13.37 0.71547 166.62 975 0.82118 - 175.53 4.75850 100.63 0.01398 14.40 0.71514 166.17 1000 0.82354 - 176.19 4.64462 99.41 0.01421 15.20 0.71375 165.68 1025 0.82863 - 176.93 4.59813 98.27 0.01449 15.97 0.71292 165.18 1050 0.82994 - 177.51 4.47959 97.05 0.01482 16.45 0.71160 164.72 1075 0.83369 - 178.12 4.41800 96.02 0.01512 16.27 0.71100 164.34 1100 0.83728 - 178.76 4.36819 95.02 0.01522 16.04 0.71111 163.96 1125 0.83914 - 179.35 4.25589 93.92 0.01522 16.13 0.71104 163.46 1150 0.84333 - 179.99 4.21812 92.91 0.01532 16.71 0.71144 162.96 1175 0.84582 179.42 4.14782 91.86 0.01540 17.23 0.71102 162.41 1200 0.84730 178.80 4.07433 90.84 0.01549 17.85 0.71091 161.96 1225 0.85017 178.20 4.03089 89.88 0.01563 18.56 0.71058 161.46 1250 0.85104 177.63 3.94928 88.92 0.01581 19.15 0.70945 160.92 1275 0.85363 177.01 3.91182 87.97 0.01603 19.78 0.70911 160.44 1300 0.85515 176.48 3.84948 86.97 0.01623 20.21 0.70802 159.92 1325 0.85660 175.94 3.79124 86.09 0.01644 20.62 0.70758 159.44 1350 0.85919 175.39 3.75583 85.18 0.01665 21.10 0.70645 158.93 1375 0.85982 174.86 3.68725 84.24 0.01685 21.41 0.70534 158.44 1400 0.86102 174.26 3.65116 83.37 0.01708 21.83 0.70492 157.95 1425 0.86270 173.77 3.60736 82.44 0.01733 22.12 0.70407 157.43 1450 0.86382 173.26 3.55564 81.56 0.01754 22.31 0.70310 156.95 1475 0.86525 172.73 3.51922 80.69 0.01778 22.70 0.70185 156.45 (continued)
14 rf device data freescale semiconductor MMG3004NT1 50 ohm typical characteristics table 10. common emitter s - parameters (v dc = 5 vdc, i dc = 250 ma, t c = 25 c, 50 ohm system) (continued) f s 11 s 21 s 12 s 22 f mhz |s 11 | ? |s 21 | ? |s 12 | ? |s 22 | ? 1500 0.86447 171.75 3.49706 79.68 0.01815 22.78 0.69775 156.18 1525 0.86543 171.19 3.46774 78.76 0.01841 22.92 0.69678 155.64 1550 0.86646 170.67 3.42587 77.92 0.01868 23.04 0.69558 155.13 1575 0.86663 170.18 3.38624 77.08 0.01889 23.19 0.69453 154.61 1600 0.86864 169.65 3.35249 76.23 0.01916 23.38 0.69264 154.06 1625 0.86848 169.14 3.31471 75.38 0.01940 23.47 0.69185 153.54 1650 0.86907 168.58 3.28145 74.52 0.01966 23.55 0.69110 153.02 1675 0.86995 168.06 3.24680 73.68 0.01990 23.70 0.68960 152.47 1700 0.86908 167.55 3.21301 72.89 0.02016 23.85 0.68912 152.02 1725 0.87075 166.99 3.17917 72.07 0.02043 23.94 0.68700 151.51 1750 0.87075 166.48 3.14872 71.28 0.02072 23.94 0.68638 151.05 1775 0.87095 165.94 3.11816 70.46 0.02101 24.02 0.68533 150.57 1800 0.87210 165.38 3.08624 69.66 0.02127 24.02 0.68377 150.09 1825 0.87206 164.86 3.05732 68.88 0.02156 24.07 0.68284 149.66 1850 0.87291 164.26 3.02693 68.07 0.02183 24.07 0.68136 149.22 1875 0.87225 163.73 2.99956 67.29 0.02214 24.03 0.68073 148.79 1900 0.87269 163.18 2.97218 66.53 0.02241 24.07 0.67941 148.37 1925 0.87341 162.62 2.94317 65.76 0.02272 24.05 0.67817 147.93 1950 0.87288 162.11 2.91922 65.01 0.02300 24.10 0.67684 147.54 1975 0.87403 161.54 2.88985 64.24 0.02333 23.99 0.67500 147.15 2000 0.87359 160.98 2.86616 63.49 0.02366 23.91 0.67393 146.75 2025 0.87242 160.38 2.84227 62.70 0.02397 23.80 0.67298 146.42 2050 0.87347 159.78 2.81763 61.98 0.02429 23.70 0.67159 146.04 2075 0.87337 159.25 2.79570 61.26 0.02465 23.66 0.67018 145.69 2100 0.87327 158.66 2.77239 60.53 0.02498 23.49 0.66901 145.36 2125 0.87318 158.11 2.75232 59.81 0.02536 23.32 0.66790 145.01 2150 0.87233 157.55 2.73039 59.07 0.02571 23.11 0.66702 144.69 2175 0.87291 156.95 2.70958 58.40 0.02602 22.93 0.66610 144.37 2200 0.87284 156.41 2.69236 57.69 0.02636 22.73 0.66519 144.03 2225 0.87305 155.87 2.67297 57.01 0.02672 22.55 0.66417 143.67 2250 0.87252 155.28 2.65614 56.29 0.02709 22.23 0.66378 143.30 2275 0.87193 154.76 2.63741 55.58 0.02744 22.01 0.66344 142.95 2300 0.87178 154.15 2.62034 54.89 0.02777 21.74 0.66387 142.57 2325 0.87159 153.64 2.60593 54.19 0.02812 21.52 0.66363 142.19 2350 0.87191 153.13 2.59024 53.50 0.02850 21.34 0.66365 141.75 2375 0.87202 152.60 2.57507 52.78 0.02891 21.08 0.66346 141.32 2400 0.87117 152.09 2.55841 52.08 0.02926 20.77 0.66342 140.87 2425 0.87077 151.53 2.54515 51.37 0.02967 20.45 0.66386 140.39 2450 0.87026 151.02 2.53215 50.65 0.03007 20.15 0.66405 139.92 2475 0.87003 150.54 2.51806 49.95 0.03047 19.77 0.66432 139.41 2500 0.86985 150.02 2.50328 49.24 0.03087 19.40 0.66490 138.85 2525 0.86940 149.49 2.49003 48.49 0.03126 18.98 0.66538 138.34 2550 0.86918 148.98 2.47736 47.77 0.03167 18.61 0.66582 137.78 2575 0.86921 148.48 2.46415 47.02 0.03208 18.11 0.66531 137.21 (continued)
MMG3004NT1 15 rf device data freescale semiconductor 50 ohm typical characteristics table 10. common emitter s - parameters (v dc = 5 vdc, i dc = 250 ma, t c = 25 c, 50 ohm system) (continued) f s 11 s 21 s 12 s 22 f mhz |s 11 | ? |s 21 | ? |s 12 | ? |s 22 | ? 2600 0.86804 147.97 2.45098 46.28 0.03246 17.66 0.66588 136.62 2625 0.86808 147.46 2.43657 45.54 0.03287 17.21 0.66553 136.01 2650 0.86755 146.99 2.42271 44.82 0.03328 16.67 0.66525 135.46 2675 0.86741 146.47 2.41111 44.06 0.03360 16.15 0.66520 134.87 2700 0.86769 145.97 2.39656 43.31 0.03402 15.56 0.66461 134.26 2725 0.86693 145.47 2.38409 42.57 0.03438 15.04 0.66448 133.68 2750 0.86730 144.92 2.37136 41.82 0.03473 14.40 0.66407 133.13 2775 0.86724 144.42 2.35811 41.07 0.03504 13.77 0.66312 132.57 2800 0.86702 143.87 2.34590 40.30 0.03530 13.25 0.66208 132.00 2825 0.86694 143.37 2.33197 39.55 0.03566 12.69 0.66088 131.39 2850 0.86602 142.83 2.32062 38.80 0.03594 12.05 0.66087 130.80 2875 0.86701 142.28 2.30727 38.05 0.03623 11.45 0.65952 130.25 2900 0.86649 141.70 2.29559 37.30 0.03650 10.82 0.65833 129.72 2925 0.86653 141.16 2.28517 36.51 0.03678 10.22 0.65713 129.15 2950 0.86661 140.59 2.27190 35.74 0.03700 9.61 0.65548 128.55 2975 0.86565 140.01 2.26115 34.97 0.03725 9.07 0.65458 127.97 3000 0.86627 139.42 2.24868 34.20 0.03747 8.51 0.65272 127.41
16 rf device data freescale semiconductor MMG3004NT1 figure 25. recommended mounting configuration notes: 1. thermal and rf grounding considerations should be used in pcb layout design. 2. depending on pcb design rules, as many vias as possible should be placed on the backside center metal ground landing pattern. 3. refer to freescale application note an2467 for additional pqfn pcb guidelines. 0.6 1.35 2.6 5.3 0.8 2.2 x 2.2
MMG3004NT1 17 rf device data freescale semiconductor package dimensions
18 rf device data freescale semiconductor MMG3004NT1
MMG3004NT1 19 rf device data freescale semiconductor
20 rf device data freescale semiconductor MMG3004NT1 product documentation refer to the following documents to aid your design process. application notes ? an1955: thermal measurement methodology of rf power amplifiers ? an3100: general purpose amplifier biasing revision history the following table summarizes revisions to this document. revision date description 2 mar. 2007 ? replaced case outline 1543 - 02 with updated 1543 - 03, issue c, p. 1, 16 - 18 ? added v cc callout to pin connections 10, 11, and 12 in fig. 1, pin connections, p. 3 ? updated part numbers in table 8, component designations and values, 900 mhz, to rohs compliant part numbers, p. 5 ? corrected circuit board callouts, v p to v ba and v cc to v supply , fig. 5, 50 ohm test circuit component layout, 900 mhz, p. 6 ? removed i dc value due to its variability over temperature, figs. 12 - 13, is - 95 adjacent channel power ratio versus output power, 900 mhz, p. 8 ? updated part numbers in table 9, component designations and values, 1900 - 2200 mhz, to rohs compliant part numbers, p. 9 ? corrected circuit board callouts, v p to v ba and v cc to v supply , fig. 15, 50 ohm test circuit component layout, 1900 - 2200 mhz, p. 10 ? removed i dc value due to its variability over temperature, figs. 22 - 23, is - 95 adjacent channel power ratio versus output power, 1900 - 2200 mhz, and fig. 24, single - carrier w - cdma adjacent channel power ratio versus output power, 1900 - 2200 mhz, p. 12 ? replaced table 10, s - parameters, p. 13 - 15 ? added product documentation and revision history, p. 19 3 mar. 2008 ? corrected tape and reel information from 12 mm, 7 inch reel to 16 mm, 13 inch reel, p. 1 ? removed footnote 2, continuous voltage and current applied to device, from table 2, maximum ratings, p. 1 ? corrected fig. 24, single - carrier w - cdma adjacent channel power ratio versus output power y - axis (acpr) unit of measure to dbc, p. 12 ? corrected s - parameter table frequency column label to read ?mhz? versus ?ghz? and corrected frequency values from ghz to mhz, p. 13, 14, 15
MMG3004NT1 21 rf device data freescale semiconductor information in this document is provided solely to enable system and software implementers to use freescale semiconductor products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. freescale semiconductor reserves the right to make changes without further notice to any products herein. freescale semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does freescale semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ?typical? parameters that may be provided in freescale semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals?, must be validated for each customer application by customer?s technical experts. freescale semiconductor does not convey any license under its patent rights nor the rights of others. freescale semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the freescale semiconductor product could create a situation where personal injury or death may occur. should buyer purchase or use freescale semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold freescale semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that freescale semiconductor was negligent regarding the design or manufacture of the part. freescale and the freescale logo are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. ? freescale semiconductor, inc. 2005 - 2008. all rights reserved. how to reach us: home page: www.freescale.com web support: http://www.freescale.com/support usa/europe or locations not listed: freescale semiconductor, inc. technical information center, el516 2100 east elliot road tempe, arizona 85284 +1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130 www.freescale.com/support europe, middle east, and africa: freescale halbleiter deutschland gmbh technical information center schatzbogen 7 81829 muenchen, germany +44 1296 380 456 (english) +46 8 52200080 (english) +49 89 92103 559 (german) +33 1 69 35 48 48 (french) www.freescale.com/support japan: freescale semiconductor japan ltd. headquarters arco tower 15f 1 - 8 - 1, shimo - meguro, meguro - ku, tokyo 153 - 0064 japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com asia/pacific: freescale semiconductor hong kong ltd. technical information center 2 dai king street tai po industrial estate tai po, n.t., hong kong +800 2666 8080 support.asia@freescale.com for literature requests only: freescale semiconductor literature distribution center p.o. box 5405 denver, colorado 80217 1 - 800 - 441 - 2447 or 303 - 675 - 2140 fax: 303 - 675 - 2150 ldcforfreescalesemiconductor@hibbertgroup.com document number: MMG3004NT1 rev. 3, 3/2008

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